| PART |
Description |
Maker |
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| UPD23C64080JLGX-XXX UPD23C64040JLGX-XXX UPD23C6404 |
64M-bit (8M-wordx8-bit/4M-wordx16-bit) Mask ROM
|
NEC
|
| MB82DP04183C-65LWFKT |
64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
| IS42S16400C |
64M-Bit x 16-Bit 4 4-Bank SDRAM
|
ISSI
|
| MBM29LV652UE-90 MBM29LV652UE-12 MBM29LV652UE |
64M (4M X 16) BIT
|
Fujitsu Component Limit...
Fujitsu Limited
Fujitsu Component Limited.
|
| MBM29LV650UE-90 MBM29LV651UE90TR 29LV650 MBM29LV65 |
64M (4M x 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
